Semiconductor device, measurement device, and correction method

ABSTRACT

A semiconductor device includes an oscillator that oscillates at a specific frequency, a semiconductor integrated circuit that integrates a temperature sensor that detects a peripheral temperature, and a controller that is electrically connected to the oscillator and that corrects temperature dependent error in the oscillation frequency of the oscillator based on the temperature detected by the temperature sensor and a sealing member that integrally seals the oscillator and the semiconductor integrated circuit.

CROSS-REFERENCE TO RELATED APPLICATION

This is a continuation application of co-pending U.S. application Ser.No. 14/926,534, filed on Oct. 29, 2015, and allowed on Oct. 14, 2016,which is a continuation application of U.S. application Ser. No.13/871,030, filed on Apr. 26, 2013 (now U.S. Pat. No. 9,197,217, issuedon Nov. 24, 2015). These applications claim priority under 35 USC 119from Japanese Patent Application No. 2012-104075 filed on Apr. 27, 2012.The disclosure of these prior applications are incorporated by referenceherein.

BACKGROUND

Technical Field

The present invention relates to a semiconductor device, a measurementdevice and a correction method.

Related Art

Recently, in measurement devices such as electricity meters formeasuring integral power consumption, integral power consumption isbeing measured for separate time band. Accompanying this trend,measurement devices incorporated with a built-in semiconductor deviceincluding an oscillator and an integrated circuit, and are capable ofmeasuring power and time are known.

As a semiconductor device built into such a measurement device, JapanesePatent Application Laid-Open (JP-A) No. 2010-34094 discloses a circuitdevice in which radiation noise is reduced, by including an oscillator,and an IC chip having a circuit section that is electrically connectedto the oscillator and thereby forms an oscillation circuit.

In such a circuit device, the oscillator includes plural electrodes, andthe IC chip includes plural oscillator pads that correspond to theplural electrodes and are electrically connected to the circuit section.The oscillator is mounted to the face of the IC chip on which the pluraloscillator pads are formed, with the plural electrodes and the pluraloscillator pads facing each other and electrically connected through anAnisotropic Conductive Film (ACF).

JP-A No. 4-36814 also discloses a technology in which wiring from aquartz oscillator to a CPU is made minimum by building the quartzoscillator and the CPU into the same IC package, thereby preventinggeneration of noise such as reflection in the clock signal.

Meanwhile, in measurement of temperature in a meter such as anelectricity meter, a temperature measurement element having a resistancevalue that changes according to temperature, such as a thermistor, isgenerally employed, and changes in resistance values of the temperaturemeasurement element are converted into changes in voltage to measure thetemperature. It is possible for measurement errors to arise from variouscauses in temperature measurement performed by the temperaturemeasurement element. Causes of measurement error include, for example,variation in the characteristics of the temperature measurement elements(the change in resistance value with temperature), errors in convertingchanges in the resistance value of the temperature measurement elementto changes in voltage, errors arising from fluctuations in power supplyvoltage supplied to a temperature measurement circuit, errors arising inAD conversion of a detection signal of the temperature measurementelement, and errors arising in conversion of a digital signal into atemperature value by a controller.

In this regard, JP-A No. 2008-14774 discloses a temperature measurementdevice as such technology for performing temperature measurement goodprecision irrespective of the power supply voltage. This temperaturemeasurement device performs correction using a linear approximation ofplural points of temperature data. The temperature measurement apparatusmeasures temperature after a power supply voltage is applied, outputs afirst voltage including temperature data and power supply voltage data,and a second voltage including power supply voltage data from which thetemperature data has been removed, and determines a temperaturemeasurement value by subtracting the second voltage data from the firstvoltage data.

Normally, a measurement device that is installed outside, such as anelectricity meter or a gas meter, is readily affected by the ambienttemperature. Further, an oscillator such as a quartz oscillator mountedto a semiconductor device as disclosed in JP-A No. 2010-34094 and JP-ANo. 4-36814 has a high temperature dependency, and there are largedifferences in error amounts in oscillation frequency of the oscillator(referred to below as “frequency errors”) due to individual differencesbetween the quartz crystals employed, and variation between individualdevices are likely to be exist. Hence, it is desirable to correct foroscillator frequency errors due to temperature in case of mounting asemiconductor device that includes an oscillator in a measurement devicethat is installed outdoor.

Conventional semiconductor devices that have a timing function generallyinclude an oscillator, a drive circuit for driving the oscillator, and atiming circuit that performs timing with a clock obtained from theoscillator. Since the drive circuit of the oscillator is built into theoscillator or to the timing circuit, at least two additional componentsare required for configuring the semiconductor device.

For the timing function there is a requirement of providing an accuratecycle, a correction circuit is generally built into the timing circuitin order to correct the oscillation frequency of the oscillator.However, in cases in which individual differences arise duringmanufacture and the oscillation frequency of the oscillator is notuniform, individual adjustment must be performed for each oscillator inthe timing circuit. Namely, such cases are extremely inefficient sinceadjustment is necessary in the final product.

For example, as illustrated in FIG. 30, in a conventional semiconductordevice, an oscillator of a predetermined frequency (for example 32.768kHz) is connected in series to an XT0 terminal and an XT1 terminal. Loadcapacitors (C_(GL) and C_(DL)) are connected respectively to the XT0terminal and the XT1 terminal, and across a power supply voltage Vss.The timing circuit has a correction function.

It is possible to perform correction of frequency error in such asemiconductor device if it at least has the configuration as describedabove. However, in cases in which the peripheral temperature fluctuatesin the environment of use, correction can be performed more accuratelyby verifying the frequency each time of the fluctuation, and connectinga temperature sensor to obtain temperature data from the temperaturesensor.

In cases of employing a temperature sensor in the semiconductor deviceas illustrated in FIG. 30 in order to perform oscillation frequencycorrection of the oscillator accompanying fluctuations in externaltemperature, mounting of the temperature sensor is required whichresults in additional manufacturing cost. Moreover, depending on thearrangement of the temperature sensor, there is no guarantee that theperipheral temperature of the oscillator and the temperature obtained bythe temperature sensor match.

The semiconductor device illustrated in FIG. 31 incorporates atemperature sensor, which is externally affixed in the semiconductordevice illustrated in FIG. 30, so as to achieve reduction in the numberof peripheral components and costs. However, in cases in which atemperature sensor is built into a semiconductor, since complete heatdissipation is not achieved in a packaged semiconductor (see FIG. 32),there is a possibility of a difference arising between peripheraltemperature and the surface temperature of the semiconductor chip, assame as the cases of externally fixing a temperature sensor.

A common issue in the conventional semiconductor devices illustrated inFIG. 30 and FIG. 31 is that since the oscillator and the oscillator loadcapacitance are affixed externally, this becomes a constraint todownsizing the board in its final product. Additionally, since a quartzoscillator operates with a minute voltage and current, and thussusceptible to noise or leak current, there is a constraint that thequartz oscillator needs to be provided in the vicinity of a timingcircuit. Further, correction operation in the final product is stillrequired since the semiconductor device and the oscillator areseparately supplied.

As described above, in a semiconductor device with a timing function,since the oscillator such as a quartz oscillator has temperaturedependency, the temperature of the oscillator needs to be measured inorder to perform correction of the oscillation frequency of theoscillator. In cases in which the temperature sensor is disposed in thevicinity of the oscillator in order to correct the oscillation frequencyof the oscillator, data of the temperature sensor needs to be input tothe correction circuit. In order to perform correction using thetemperature of the correction circuit at good precision, there is aconcern that constraints might arise regarding the layout, such asdisposing the oscillator in the vicinity of the correction circuit. Ifan expensive high precision oscillator is employed in order to eliminatethe need for correction, there is a concern regarding a rise inmanufacturing costs.

SUMMARY

The present invention has been arrived at in consideration of the abovecircumstances, and provides a semiconductor device, measurement deviceand correction method that are capable of correcting errors inoscillation frequency of an oscillator caused by temperature at highprecision.

A first aspect of the present invention is a semiconductor deviceincluding: an oscillator that oscillates at a specific frequency; asemiconductor integrated circuit that integrates a temperature sensorthat detects a peripheral temperature, and a controller that iselectrically connected to the oscillator and that corrects temperaturedependent error in the oscillation frequency of the oscillator based onthe temperature detected by the temperature sensor; and a sealing memberthat integrally seals the oscillator and the semiconductor integratedcircuit.

Another aspect of the present invention is a measurement deviceincluding: a measurement section that measures integral powerconsumption; the semiconductor device of the first aspect; and a displaysection that displays the integral power consumption measured by themeasurement section and a time that is timed using an oscillation signalfrom the oscillator.

A further aspect of the present invention is a method of correcting anerror in a semiconductor device including an oscillator that oscillatesat a specific frequency, a semiconductor integrated circuit thatintegrates a temperature sensor that detects peripheral temperature, anda controller that is electrically connected to the oscillator and thatcorrects temperature dependent error in the oscillation frequency of theoscillator, and a sealing member that integrally seals the oscillatorand the semiconductor integrated circuit, the method including:acquiring frequency correction data for each of predetermined pluraltemperature conditions; and correcting the error based on the acquiredfrequency correction data.

The present aspects are capable of correcting errors in oscillationfrequency of an oscillator caused by temperature at high precision.

BRIEF DESCRIPTION OF THE DRAWINGS

Exemplary embodiments of the present invention will be described indetail based on the following figures, wherein:

FIG. 1 is a perspective view of an integrating electricity meterprovided with a semiconductor device according to a first exemplaryembodiment;

FIG. 2 is a partial cutaway diagram illustrating a semiconductor deviceaccording to the first exemplary embodiment, as viewed from the backface;

FIG. 3 is a cross-sectional view taken along line 3-3 of FIG. 2;

FIG. 4 is an exploded perspective view illustrating an oscillatoraccording to the first exemplary embodiment;

FIG. 5 is a block diagram for explaining an LSI of a semiconductordevice according to the first exemplary embodiment;

FIG. 6A to FIG. 6E are explanatory diagrams illustrating a wire bondingprocedure for disposing an oscillator and an LSI on a lead frame in amanufacturing method of the semiconductor device according to the firstexemplary embodiment;

FIG. 7A to 7D are explanatory diagrams illustrating a procedure forresin sealing the lead frame, the oscillator and the LSI in themanufacturing method of the semiconductor device according to the firstexemplary embodiment;

FIG. 8 is a partial cutaway diagram illustrating a modified example of asemiconductor device according to the first exemplary embodiment;

FIG. 9 is a flow chart illustrating a flow of first frequency correctionprocessing according to the first exemplary embodiment;

FIG. 10 is a flow chart illustrating a flow of second frequencycorrection processing according to the first exemplary embodiment;

FIG. 11 is a graph illustrating a relationship between temperature andfrequency deviation in the semiconductor device according to the firstexemplary embodiment;

FIG. 12 is a block diagram for explaining an LSI of a semiconductordevice according to a second exemplary embodiment;

FIG. 13A is diagram illustrating an example of clock values of anoscillator of the semiconductor device according to the second exemplaryembodiment, and FIG. 13B is a diagram illustrating an example of clockvalues of a reference signal oscillator of the semiconductor deviceaccording to the second exemplary embodiment;

FIG. 14 is a flow chart illustrating a flow of first frequencycorrection processing according to the second exemplary embodiment;

FIG. 15 is a flow chart illustrating a flow of frequency errorderivation processing according to the second exemplary embodiment;

FIG. 16A is a timing chart of the frequency error derivation processingaccording to the second exemplary embodiment and illustrates whencounting is started, and FIG. 16B is a timing chart of the samefrequency error derivation processing and illustrates when counting isstopped;

FIG. 17 is a flow chart illustrating a flow of second frequencycorrection processing according to the second exemplary embodiment;

FIG. 18 is a block diagram for explaining another example of an LSI ofthe semiconductor device according to the second exemplary embodiment;

FIG. 19 is a block diagram for explaining another example of an LSI ofthe semiconductor device according to the second exemplary embodiment;

FIG. 20 is a partial cutaway diagram of a semiconductor device accordingto a third exemplary embodiment, as viewed from the back face;

FIG. 21 is a cross-sectional view taken on line 21-21 of FIG. 20;

FIG. 22 is a partial cutaway diagram illustrating a semiconductor deviceaccording to a fourth exemplary embodiment, as viewed from the backface;

FIG. 23 is an explanatory diagram for explaining a lead frame of thesemiconductor device according to the fourth exemplary embodiment;

FIG. 24 is a partial cutaway diagram illustrating a semiconductor deviceaccording to a fifth exemplary embodiment, as viewed from the back face;

FIG. 25 is a cross-sectional view taken on line 25-25 of FIG. 24;

FIG. 26A to FIG. 26E are explanatory diagrams illustrating a wirebonding procedure for disposing an oscillator and an LSI on a lead framein a manufacturing method for manufacturing the semiconductor deviceaccording to the fifth exemplary embodiment;

FIG. 27A to 27D are explanatory diagrams illustrating a procedure forresin sealing a lead frame, an oscillator and an LSI in a manufacturingmethod for manufacturing a semiconductor device according to the fifthexemplary embodiment;

FIG. 28 is a partial cutaway diagram illustrating a semiconductor deviceaccording to a sixth exemplary embodiment, as viewed from the back face;

FIG. 29 is a cross-section taken on line 29-29 of FIG. 28;

FIG. 30 is a block diagram illustrating a related example of aconnection state between a semiconductor device with a built-in timingfunction and an oscillator; and

FIG. 31 is a block diagram illustrating another related example of aconnected state between a semiconductor device with a built-in timingfunction and an oscillator; and

FIG. 32 is a schematic cross-section illustrating a related example ofpackaged generic semiconductor device.

DETAILED DESCRIPTION First Exemplary Embodiment

Detailed explanation follows regarding a semiconductor device accordingto the present exemplary embodiment, with reference to the appendeddrawings.

Configuration

As illustrated in FIG. 1, an integrating electricity meter 10 equippedwith a semiconductor device according to a first exemplary embodiment isattached to a front face of a fixing plate 102 that is fixed to anexternal wall 100 of, for example, a house. The integrating electricitymeter 10 mainly includes a main body 12, a transparent cover 14 thatcovers the main body 12, and a connection section 16 provided at a lowerportion of the main body 12.

A power supply cable 18 and a load-side cable 20 are connected frombelow the connection section 16 and supply current to the integratingelectricity meter 10. The main body 12 has a rectangular box shape inplan view. A semiconductor device 24 and a power consumption meteringcircuit 22, both described later, are mounted on a base plate (notillustrated in the drawings) inside the main body 12. The powerconsumption metering circuit 22 serves as a metering section thatmeasures integral power consumption according to a signal output fromthe semiconductor device 24. Note that for ease of explanation the sizesof the power consumption metering circuit 22 and the semiconductordevice 24 are emphasized in FIG. 1.

A liquid crystal display 15 having a horizontally long shape is providedon the front face of the main body 12. The liquid crystal display 15displays such information as the power consumption per unit time asmeasured by the power consumption metering circuit 22 and the integralpower consumption used in each time band. Although the integratingelectricity meter 10 according to the present exemplary embodiment is anelectronic electricity meter in which the power consumption meteringcircuit 22 is employed as the metering section, there is no limitationthereto. The integrating electricity meter 10 may be an induction typeelectricity meter, for example, in which a rotating disk is employed formeasuring the power consumption.

Detailed explanation follows regarding the semiconductor device 24according to the present exemplary embodiment. In the followingexplanation, arrow X indicates the left-right direction of thesemiconductor device 24 in the plan view illustrated in FIG. 2, andarrow Y indicates the up-down direction therein, and arrow Z indicatesthe height direction in the cross-sectional view of the semiconductordevice 24 illustrated in FIG. 3. As illustrated in FIG. 2 and FIG. 3,the external shape of the semiconductor device 24 is a rectangular shapein plan view, and the semiconductor device 24 includes a lead frame 26that serves as a framework, an oscillator 28 mounted to the front face(first face) of the lead frame 26, an LSI 30 that serves as anintegrated circuit and is mounted to the back face (second face) of thelead frame 26, and molding resin 32 that serves as a sealing member.

The lead frame 26 is a plate member formed by pressing out a flat sheetof a metal such as copper (Cu) or an iron (Fe) and nickel (Ni) alloy,with a pressing machine. The lead frame 26 includes a die pad 26Aprovided at a central portion and serving as a mounting section, hangingleads 26B that extend outwards from the die pad 26A along its diagonallines, and plural leads (terminals) 38 provided between adjacent hangingleads 26B.

The leads 38 are long thin members extending towards the central of thedie pad 26A. Plural leads 38 are formed at a specific separation aroundthe periphery of the die pad 26A. In the present exemplary embodimentthere are 16 lines of the leads 38 formed between each adjacent pair ofthe hanging leads 26B. The leads 38 are configured from inner leads 38Apositioned at the die pad 26A side of the leads 38, and outer leads 38Bpositioned at the outer peripheral end side of the semiconductor device24. The inner leads 38A are pressed down by a press machine so as to belower than the die pad 26A and extend parallel to the die pad 26A inside view (see FIG. 3). The leading end portions of the inner leads 38Anearest to the die pad 26A are covered with an electroplated film 40.Although the electroplated film 40 in the present exemplary embodimentis formed from silver (Ag), for example, there is no limitation thereto,and the electroplated film may be formed from other metal such as gold(Au).

The outer leads 38B are exposed from the molding resin 32, bent furtherdownwards, and their leading end portions are parallel to the innerleads 38A in side view. Namely, the outer leads 38B are configured asgull-wing leads. The outer leads 38B are covered by an electroplatedsolder film. Substances which may be employed as an electroplated solderfilm include, for example, tin (Sn), a tin (Sn) and lead (Pb) alloy, ora tin (Sn) and copper (Cu) alloy.

The die pad 26A at the central portion of the lead frame 26 is a flatplate member having a rectangular shape in plan view. Two openings 26Care formed at the right side of the central portion of the die pad 26A,penetrating through along the die pad 26A thickness direction. Theopenings 26C are each formed in a rectangular shape having their longsides along the transverse (left-right)direction, and face externalelectrodes 34 of the oscillator 28, which are described later (see FIG.4).

The region between the two openings 26C configures an oscillatormounting beam 42, which serves as an oscillator mounting regionextending in the left-right direction of FIG. 2. The oscillator 28 ismounted to the front face of the oscillator mounting beam 42 of the leadframe 26 (see FIG. 4), via a bonding agent (not illustrated in thedrawings). In other words, the openings 26C are provided at eachopposite side of the oscillator mounting beam 42. The oscillator 28 isan electrical component having a rectangular shape with its longitudinaldirection oriented in the up-down direction of FIG. 2. In the presentexemplary embodiment, a generic oscillator with a frequency of 32.768kHz, mountable to general electronic devices, and which is externallyattachable to the semiconductor device 24, is employed as the oscillator28.

As illustrated in FIG. 4, the oscillator 28 has a rectangular shape inplan view and includes a vibrating reed 44, a package body 46 thathouses the vibrating reed 44, and a lid 48. The vibrating reed 44 is aquartz crystal vibrating reed, in which excitation electrodes 44A areformed as a film on the surface of a quartz crystal having a tuning forkshape and formed from an artificial quartz crystal. The vibrating reed44 vibrates due to a piezoelectric effect when current flows in theexcitation electrodes 44A. The vibrating reed 44 is not limited to atuning fork shape and an AT cut quartz crystal may be employed. Further,vibrating reeds formed from lithium tantalate (LiTaO₃) or lithiumniobate (LiNbO₃) may also be employed. An MEMS vibrating reed formedfrom silicon may also be employed.

The package body 46 is formed as a box shape opened at its upperportion. A seat 47 on which the vibrating reed 44 is affixed is formedat one longitudinal direction end side of a bottom portion of thepackage body 46. The base portion of the vibrating reed 44 is fixed tothe seat 47 to allow vibration, and the vibrating reed 44 ishermetically sealed by joining together the package body 46 and the lid48 in a vacuum state. The external electrodes 34 are formed at two endsof the lower face of the package body 46, and are separated from eachother by a specific distance L1. The external electrodes 34 serve asterminals that are electrically connected to the excitation electrodes44A of the vibrating reed 44. A width L2 of the oscillator mounting beam42 is formed narrower than the distance between the external electrodes34.

The lengths of the external electrodes 34 along the width direction ofthe package body 46 match with the width of the package body 46. Asillustrated in FIG. 2, the size of the external electrodes 34 is largerthan the size of electrode pads 50 and oscillator electrode pads 54formed on the LSI 30, which are described later. The openings 26C of thedie pad 26A are also formed larger than the external electrodes 34.

As illustrated in FIG. 2 and FIG. 3, the LSI 30 serving as an integratedcircuit or a semiconductor chip is mounted on the back face of the leadframe 26 at the central portion of the die pad 26A using a bondingmember (not illustrated in the drawings). The LSI 30 is a thinrectangular shaped electronic component, and an end portion on the rightside of the LSI 30 covers about half of each of the openings 26C. Theoscillator 28 and the LSI 30 are accordingly disposed so as to overlapin a plan view projection. The external electrodes 34 of the oscillator28 are exposed through the openings 26C when the lead frame 26 is viewedfrom the LSI 30 side.

The plural electrode pads 50 that are electrically connected to thewiring lines inside the LSI 30 are provided at an outer peripheral endportion around each side of the lower face of the rectangular shaped LSI30. The electrode pads 50 are formed from a metal, such as aluminum (Al)or copper (Cu), and 16 electrode pads 50 are provided on each side ofthe LSI 30. The number of the electrode pads 50 may be the same on eachof the sides, or may be a different such that there are fewer or moreelectrode pads 50 provided on the side on which the oscillator electrodepads 54 (described later) are provided. The electrode pads 50 areconnected by bonding wires 52 to the inner leads 38A. Although thenumber of the electrode pads 50 provided in the present exemplaryembodiment is 16 on each of the sides of the LSI 30 so as to match thenumber of the leads 38, there is no limitation thereto, and theelectrode pads 50 may be provided more than the number of the leads 38for used in another application.

The oscillator electrode pads 54 are also provided, separately to theelectrode pads 50, at an outer peripheral portion at the oscillator 28side of the LSI 30. Two oscillator electrode pads 54 are providedbetween the electrode pads 50, at the central portion along the up-downdirection of the LSI 30 in FIG. 2. Namely, a layout region (firstregion) for the oscillator electrode pads 54 is formed at the centralportion of one peripheral side of the LSI, and layout regions (secondregions) for the electrode pads 50 are formed at other regions on theone peripheral side, where the oscillator electrode pads 54 areprovided, from the central portion to the both ends of this side, andare formed on the remaining three peripheral sides. The oscillatorelectrode pads 54 are connected to the external electrodes 34 of theoscillator 28 by the bonding wires 52 that pass through the openings26C. The bonding wires 52 are wire shaped conducting members formed froma metal such as gold (Au) or copper (Cu).

The two oscillator electrode pads 54 that are provided at the centralportion along the up-down direction of the LSI 30 in FIG. 2, areseparated from the electrode pads 50 that are provided on the same side.In other words, the interval between the oscillator electrode pads 54and the adjacent electrode pads 50 is greater than the interval betweenthe electrode pads 50.

In another embodiment, the interval between the wire bonded electrodepads 50 and the oscillator electrode pads 54 may be made greater thanthe interval between the wire bonded electrode pads 50 by making theinterval between the oscillator electrode pads 54 and the adjacentelectrode pads 50 the same as that between the electrode pads 50, andnot wire bonding the electrode pads 50 disposed adjacent to theoscillator electrode pads 54. In other words, for the electrode pads 50of the LSI 30, the interval between the bonding wire 52 connecting theoscillator electrode pads 54 and the external electrodes 34 and thebonding wire 52 connecting together the electrode pads 50 and the innerleads 38A is greater than the distance between the bonding wires 52connecting the electrode pads 50 and the inner leads 38A.

The bonding wires 52 that connect the oscillator electrode pads 54 andthe external electrodes 34, and the bonding wires 52 that connect theelectrode pads 50 and the inner leads 38A, are formed in athree-dimensional (3-D) intersection form. As illustrated in FIG. 3, thebonding wires 52 that connect the electrode pads 50 and the inner leads38A stride over the bonding wires 52 that connect the oscillatorelectrode pads 54 and the external electrodes 34. Namely, in order toprevent shorting of the bonding wires 52, the apex of the bonding wires52 that connect the oscillator electrode pads 54 and the externalelectrodes 34 is formed to be lower (less far away from the lead frame26) than the apex of the bonding wires 52 that connect the electrodepads 50 and the inner leads 38A.

Given that the lead frame 26 is taken as a reference plane, the heightof the apex of the bonding wires 52 that connect the oscillatorelectrode pads 54 and the external electrodes 34 may be made smallerthan the height of the apex of all of the bonding wires 52 that togetherthe electrode pads 50 and the inner leads 38A, or may be made smalleronly than the height of the apex of the bonding wires 52 that connectthe electrode pads 50 and the inner leads 38A and are disposed betweenthe oscillator electrode pads 54 and the external electrodes 34.

The center of the LSI 30 and the center CP of the rectangular shapedoscillator 28 are aligned substantially along the X-axis direction.Namely, the width of any displacement of the center CP of the oscillator28 from the X-axis in the Y-axis direction is narrower than the Y-axisdirection width of the central portion along the up-down direction ofthe LSI 30 where the oscillator electrode pads 54 are disposed. In thislayout, the oscillator electrode pads 54 provided at the center portionof a given peripheral side of the LSI 30 and the external electrodes 34that are separately disposed at the two ends along the longitudinaldirection of the oscillator 28 are connected by the bonding wires 52.Further, the electrode pads 50 arranged in both sides of the oscillatorelectrode pads 54 and the inner leads 38A arranged parallel to theelectrode pads 50 along the Y-axis direction are also connected by thebonding wires 52.

Since the oscillator electrode pads 54 are separately disposed from theelectrode pads 50, the bonding wires 52 that connect the electrode pads50 and the inner leads 38A pass through portions below the bonding wires52 connect the oscillator electrode pads 54 and the external electrodes34. Namely, it is possible to avoid the bonding wires 52 that connectthe electrode pads 50 and the inner leads 38A crossing at the vicinityof the apex of the bonding wires 52 that connect the oscillatorelectrode pads 54 and the external electrodes 34, whereby an efficientthree-dimensional intersection can be formed. Further, the height of theapex of the bonding wires 52 that connect the electrode pads 50 and theinner leads 38A can be reduced, whereby the height of the package canalso be made small.

The connection positions of the bonding wires 52 to the externalelectrodes 34 of the oscillator 28 is displaced from the center of theoscillator 28 in the X-axis direction toward the inner leads 38A side.Such connection configuration enables avoiding contact of the bondingwires 52 with the end portions of the LSI 30. The connection positionsof the bonding wires 52 to the external electrodes 34 of the oscillator28 are also displaced from the center of the external electrodes 34 inthe X-axis direction towards the center of the oscillator 28. Suchconnection configuration enables the number of cross-overs of thebonding wires 52 connected to the external electrodes 34 with thebonding wires 52 that connect the electrode pads 50 and the inner leads38A can be reduced.

The oscillator 28, the LSI 30 and the lead frame 26 are sealed with themolding resin 32, which forms the external profile of the semiconductordevice 24. The molding resin 32 is poured without generating internalvoids, and the height of the molding resin 32 is twice the height of theinner leads 38A or greater. In other words, a distance H1 from thesurface of the molding resin 32 at the oscillator 28 mounting side tothe center in Z-axis of the inner leads 38A is greater than a distanceH2 from the surface of the molding resin 32 at the LSI 30 mounting sideto the center in Z-axis of the inner leads 38A. A distance H3 from thesurface of the molding resin 32 at the LSI 30 mounting side to thecenter in Z-axis of the lead frame 26 is also greater than the distanceH2 from the surface of the molding resin 32 at the LSI 30 mounting sideto the center in Z-axis of the inner leads 38A. The present exemplaryembodiment employs a thermoset epoxy resin containing silica basedfiller as the molding resin 32. However, embodiments are not limitedthereto, and, for example, a thermoplastic resin may be employedtherefor.

Explanation follows regarding an internal configuration of the LSI 30.As illustrated in FIG. 5, the LSI 30 is built-in with an oscillationcircuit 51, a frequency divider circuit 53, a timer circuit 56, atemperature sensor 58, a controller (CPU) 60, and a registry section 70.The oscillation circuit 51 is connected to the oscillator 28 and causesthe oscillator 28 to oscillate. The frequency divider circuit 53frequency-divides a signal (in the present exemplary embodiment, at afrequency of 32.768 kHz) output from the oscillator 28 to give aspecific clock (for example 1 Hz). The timer circuit 56 measures timebased on the signal that has frequency-divided by the frequency dividercircuit 53 and transmits the time to the controller 60. The temperaturesensor 58 measures the temperature of the LSI 30 and transmits themeasured temperature to the controller 60. It is possible to assume thatthe temperature of the oscillator 28 that is disposed in the same leadframe as of the LSI 30, and in the vicinity of the LSI 30, and that iselectrically connected to the LSI 30, is the same as the temperature ofthe LSI 30. Namely, the temperature sensor 58 is capable of measuringthe temperature of the oscillator 28 disposed at the periphery of theLSI 30 with good precision. The controller 60 displays on the liquidcrystal display 15 (see FIG. 1) information such as the powerconsumption per unit time that is measured by the power consumptionmetering circuit 22 based on the time measured by the timer circuit 56.The registry section 70 includes plural registers for storing variousdata used for correcting the oscillation frequency of the oscillator 28.Detailed explanation regarding the plural registers is given later in adescription of oscillation frequency correction. The LSI 30 also has abuilt-in computation circuit that performs computation and a built-ininternal power source.

Manufacturing Procedure

Explanation follows regarding a manufacturing procedure of thesemiconductor device 24.

First, as illustrated in FIG. 6A, the lead frame 26 is placed on amounting block 2 of a bonding apparatus 1 such that the leads 38 arepositioned downwards. A well cavity 3 is formed in the mounting block 2in order to house the oscillator 28 when the lead frame 26 is invertedafter the oscillator 28 is fixed to the first face. The oscillator 28 isconveyed in sealed in a package 29 on a tape with the externalelectrodes 34 facing downwards. The openings 26C is formed in advance inthe lead frame 26 by a process such as pressing.

Next, as illustrated in FIG. 6B, the package 29 is unsealed, and theoscillator 28 is taken out with a picker 4, and the oscillator 28 isdisposed on the first face of the die pad 26A, namely on the top face inFIG. 6B, such that the external electrodes 34 of the oscillator 28overlap with the openings 26C. Then, the oscillator 28 is fixed to thedie pad 26A with bonding agent. In cases in which the oscillator 28 issealed in the package 29 in a state in which the external electrodes 34face upwards, it is preferable to employ a picker 4 with a rotationmechanism, so that the oscillator 28 can be vertically inverted usingthe rotation mechanism after the oscillator 28 has been taken out by thepicker 4, and can be mounted on the first face of the die pad 26A afterdirecting the external electrodes 34 downwards.

After fixing the oscillator 28 to the first face of the die pad 26A, thelead frame 26 is vertically inverted and placed on the mounting block 2,as illustrated in FIG. 6C. The lead frame 26 is thereby placed on themounting block 2 in a state in which the first face is facing downwards.At this time, the oscillator 28 is housed in the well cavity 3.

After vertically inverting the lead frame 26 and placing the lead frame26 on the mounting block 2, the LSI 30 is fixed on the second face ofthe die pad 26A, which is the opposite side to the first face of the diepad 26A, at a portion that is adjacent to the openings 26C, asillustrated in FIG. 6D. The second face is illustrated as the upper faceof the die pad 26A in FIG. 6D.

Finally, as illustrated in FIG. 6E, the electrode pads 50 of the LSI 30and the leads 38 are connected with the bonding wires 52, and theoscillator electrode pads 54 of the LSI 30 and the external electrodes34 of the oscillator 28 are connected with the bonding wires 52, therebyforming the semiconductor device 24. At this time, the height of theapex of each of the bonding wires 52 that connect the oscillatorelectrode pads 54 of the LSI 30 and the external electrodes 34 of theoscillator 28 is made lower than the height of the apex of each of thebonding wires 52 that connect the electrode pads 50 of the LSI 30 andthe leads 38. After the oscillator electrode pads 54 of the LSI 30 andthe external electrodes 34 of the oscillator 28 have been connected withthe bonding wires 52, the electrode pads 50 of the LSI 30 and the leads38 are connected with the bonding wires 52 so as to span over thepreviously connected bonding wires 52. Further, the bonding wires 52that connect the oscillator electrode pads 54 of the LSI 30 and theexternal electrodes 34 of the oscillator 28 and the bonding wires 52that connect the electrode pads 50 and the leads 38 are configured toform a 3-D intersection. Specifically, the configuration is made suchthat the bonding wires 52 that connect the electrode pads 50 of the LSI30 and the leads 38 cross over the bonding wires 52 that connect theoscillator electrode pads 54 of the LSI 30 and the external electrodes34 of the oscillator 28 at positions displaced from the apexes of thebonding wires 52 that connect the oscillator electrode pads 54 and theexternal electrodes 34.

According to the procedure illustrated in FIG. 6A to FIG. 6E, by fixingthe oscillator 28 and the LSI 30 to the lead frame 26 (the die pad 26A)and connecting the LSI 30 and the oscillator 28, the connection of theLSI 30 and the oscillator 28 can be efficiently performed from thesecond face side of the die pad 26A as well as the connection of the LSI30 and the leads 38, even though the LSI 30 is fixed to the second faceof the die pad 26A, which is the opposite side to the first face of thedie pad 26A on which the oscillator 28 is affixed. Further, since theoscillator 28 and the LSI 30 are directly connected with the bondingwires 52 rather than being connected through the lead frame 26, thewiring resistance can be reduced compared to cases in which theoscillator 28 and the LSI 30 are connected through the lead frame 26, orcases in which bonding wires 52 are pulled around to the back side ofthe lead frame 26 for connection.

Explanation next follows regarding a procedure for sealing thesemiconductor device 24 with the molding resin 32.

First, as illustrated in FIG. 7A, the semiconductor device 24 is fixedinside a cavity 6 of a mold 5 such that the first face of the lead frame26 (the die pad 26A), which is the face on which the oscillator 28 isaffixed, is directed upward, and the second face of the lead frame 26(the die pad 26A), which is the face on which the LSI 30 is affixed, isdirected downward. Since the thickness of the oscillator 28 is greaterthan the LSI 30, the semiconductor device 24 is disposed inside thecavity 6 such that the lead frame 26 (the die pad 26A) is positionedlower than the height direction center of the cavity 6 in the mold 5.The outer leads 38B protrude out to the outside of the mold 5 in a statein which the semiconductor device 24 is fixed inside the cavity 6.

After the semiconductor device 24 is fixed inside the cavity 6, themolding resin 32 is poured in through a pouring hole 7 provided along alower face of the leads 38, as illustrated by the arrow a in FIG. 7B. Asdescribed above, since the semiconductor device 24 is fixed such thatthe lead frame 26 (the die pad 26A) being positioned lower than theheight direction center of the cavity 6 in the mold 5, the molding resin32 is first poured along the lead frame 26 (the die pad 26A). Since thepoured molding resin 32 has a property that tends to flow into largerspace, the molding resin 32 attempts, for example, to flow above thelead frame 26 through the gap between the die pad 26A and theresin-flow-direction leading end of the leads 38. However, this route isblocked by the oscillator 28, and the molding resin 32 flows aroundbelow the lead frame 26, as illustrated by arrows b in FIG. 7C.

Then, as illustrated by arrows c in FIG. 7D, the molding resin 32 flowsabove the upper face side of the lead frame 26. After the lower faceside of the lead frame 26 is filled with the molding resin 32, the upperface side of the lead frame 26 is filled with the molding resin 32.

After both sides of the lead frame 26 are filled with the molding resin32, the mold 5 is heated and the molding resin 32 is cured.

In the semiconductor device 24, since the oscillator 28 is fixed to theupper face of the lead frame 26 (the die pad 26A) and the LSI 30 isfixed to the lower face thereof, the lead frame 26 is necessarilydisposed lower than the height direction center of the cavity 6 of themold 5 in the sealing process of the semiconductor device 24 with themolding resin 32. In such case in which a wide space is present at theupper side of the lead frame 26, the molding resin 32 tends to flowtoward the upper side of the lead frame 26.

Accordingly, pressure from the molding resin 32 poured into the cavity 6through the pouring hole 7 might not be uniformly imparted to both facesof the lead frame 26, and may be imparted more strongly to the upperface of the lead frame 26.

However, the flow path of the molding resin 32 is adjusted using theoscillator 28, such that the molding resin 32 first flows below the leadframe 26, the molding resin 32 that has flowed into the cavity 6 can beexpected to serve as a bottom support for the lead frame 26. Therefore,displacement of the lead frame 26 in the up-down direction in the cavity6 during pouring the molding resin 32 can be prevented.

Operation

Explanation next follows regarding operation of the semiconductor device24 and operation of the integrating electricity meter 10 according tothe present exemplary embodiment. In the semiconductor device 24according to the present exemplary embodiment, the oscillator 28 and theLSI 30 are sealed and integrated together with the molding resin 32 andthe LSI 30 is built-in with the oscillation circuit 51, the frequencydivider circuit 53, and the timer circuit 56. Therefore, time can bemeasured by simply mounting the semiconductor device 24 to the baseplate inside the integrating electricity meter 10 illustrated in FIG. 1.Namely, there is no need to separately provide components such as theoscillator 28 and the frequency divider circuit 53 to the base plate.Accordingly, no effort is required such as adjusting connection betweenthe oscillator 28 and the semiconductor device 24.

Further, the temperature sensor 58 is built-in to the LSI 30, whichenables the temperature of the vicinity of the oscillator 28 to beaccurately measured. Therefore, frequency correction can be performed inhigh precision to the signal (frequency) output from the oscillator 28even when there are fluctuations to the signal due to temperaturevariation. Accordingly, a frequency can be controlled in high precisioneven though a low cost oscillator is employed instead of a high costhigh precision oscillator.

Furthermore, as illustrated in FIG. 2, the external electrodes 34 of theoscillator 28 and the oscillator electrode pads 54 of the LSI 30 aredirectly connected using the bonding wires 52 that pass through theopenings 26C. This enables connection to be made with the shortestwiring without intervention of the lead frame 26, thereby reducingwiring resistance. Since the length of the two strands of the bondingwires 52 that connect the external electrodes 34 and the oscillatorelectrode pads 54 is uniform, tension in the bonding wires 52 can bemade even, thereby preventing contact due to breaking or sagging of thebonding wires 52. Since the wiring can be achieved without interventionof the lead frame 26, the configuration is not susceptible to noise anda signal can be transmitted smoothly from the oscillator 28 to the LSI30. Noise is liable to occur between bonding wires 52 that are formedparallel to each other. However, the bonding wires 52 that connect theoscillator electrode pads 54 and the external electrodes 34 are disposedin a 3-D intersection with respect to the other bonding wires 52. Thisconfiguration enables reducing interference between the bonding wires 52that connect the oscillator electrode pads 54 and the externalelectrodes 34 and the other bonding wires 52, in particular, enablesreducing the influence of noise from the other bonding wires 52 to theoscillator 28. Since, the external electrodes 34 are larger than theoscillator electrode pads 54, wire bonding is facilitated.

The oscillator 28 and the LSI 30 are respectively mounted to the frontface and the back face of the lead frame 26, and are disposed so as tooverlap with each other in a plan view projection. Therefore, thelongitudinal and transverse sizes of the semiconductor device 24 can bemade smaller compared to cases in which the oscillator 28 and the LSI 30are mounted side-by-side on one face of the lead frame 26.

Since the LSI 30 is positioned at a central portion of the die pad 26A,the lengths of the bonding wires 52 that connect the electrode pads 50and the leads 38 can be made constant. The wire bonding operation isthereby facilitated, enabling yield to be improved.

Embodiments are not limited to the present exemplary embodiment in whichall of the inner leads 38A are connected to the electrode pads 50 of theLSI 30. For example, as illustrated in a modified example of FIG. 8, thedie pad 26A may be earthed by connecting a given inner lead 38A to thedie pad 26A using one of the bonding wires 52, and connecting thecorresponding outer lead 38B to earth. Static in the die pad 26A can besuppressed in such cases. Since the LSI 30 and the oscillator 28 arerespectively allocated on the two faces of the lead frame, so that thelead frame is interposed therebetween, noise from the LSI 30 to theoscillator 28 can be shielded by the die pad 26A.

In the present exemplary embodiment, the oscillation circuit 51 isdisposed in the vicinity of the oscillator electrode pads 54, and adigital circuit section 55 is disposed so as to surround the oscillationcircuit 51. The digital circuit section 55 is a circuit section thatperforms processing on digital signals, and noise is not as liable tooccur as in other elements. Therefore, the influence of noise receivedby the oscillation circuit 51 from the other elements (in particular,from analogue circuits) that are built-in to the LSI 30 can be reduced.An example of the digital circuit section 55 includes a CPU.

Oscillation Frequency Correction

Explanation next follows regarding frequency correction processing inthe semiconductor device 24 according to the present exemplaryembodiment, which corrects temperature dependent errors in theoscillation frequency of the oscillator 28.

In the semiconductor device 24, for example on shipping, the temperatureis measured by the temperature sensor 58 in various states, such as whenthe LSI 30 inside the semiconductor device 24 is at room temperature(25° C. in this case), when the LSI 30 is at a reference temperaturelower than room temperature (referred to below as “low temperature”) andwhen the LSI 30 is at a reference temperature higher than roomtemperature (referred to below as “high temperature”). Then, for exampleafter shipping, the semiconductor device 24 performs error correction ofthe frequency of the oscillator 28 using the temperatures obtained bythese measurements as trimming data, to compensate for measurementerrors arising from manufacturing variation in the temperature sensor58.

The registry section 70 described above (see FIG. 5) includes: atemperature measurement value register 71 that stores data expressingthe temperature measured by the temperature sensor 58; a low temperatureregister 72 that stores data expressing temperature measured by thetemperature sensor 58 when the surrounding (environmental) temperatureis the low temperature; a room temperature register 73 that stores dataexpressing the temperature measured by the temperature sensor 58 whenthe surrounding temperature is room temperature; a high temperatureregister 74 that stores data expressing the temperature measured by thetemperature sensor 58 when the surrounding temperature is the hightemperature; and a frequency correction register 75 that storescorrection values for the oscillation frequency of the oscillator 28derived from the data expressing these temperatures. Each of theregisters is connected to the controller 60 through a data bus 76, andthe controller 60 performs reading from, and writing to, each of theregisters through the data bus 76.

The semiconductor device 24 performs first frequency correctionprocessing in order to correct frequency errors of the oscillator 28.The first frequency correction processing includes: measuring thetemperature with the temperature sensor 58 in the state in which thesemiconductor device 24 is at the low temperature, in the state in whichthe semiconductor device 24 is at room temperature, and in the state inwhich the semiconductor device 24 is at the high temperature; andstoring the temperatures obtained by these measurements as trimming datain the low temperature register 72, the room temperature register 73 andthe high temperature register 74, respectively.

During, for example, a shipping test, a tester (user) first places thesemiconductor device 24 inside a constant temperature chamber in whichthe temperature inside the chamber is set at room temperature. The userthen executes the first frequency correction processing in thesemiconductor device 24 by, for example, inputting a measurementoperation signal to start measuring the temperature using thetemperature sensor 58 to the semiconductor device 24. At this time, theuser may input the measurement operation signal to the semiconductordevice 24 by connecting a device that outputs the measurement operationsignal to the leads 38 of the semiconductor device 24. The measurementoperation signal contains data indicating which temperature among theroom temperature, the high temperature or the low temperature is set inthe constant temperature chamber.

FIG. 9 is a flow chart illustrating a flow of the first frequencycorrection processing in the semiconductor device 24 according to thepresent exemplary embodiment. A program of the first frequencycorrection processing is executed at the time when the measurementoperation signal is input, and is pre-installed in a storage section ofthe controller 60. The execution timing of the program is not limited toabove.

At step S101, the controller 60 determines whether or not a specificperiod of time (for example, several hours) has elapsed from input ofthe measurement operation signal. The specific period of time may be atleast a period of time required for the internal temperature of thesemiconductor device 24 (the temperature of the LSI 30) to reach thetemperature of the constant temperature chamber.

If it is determined at step S101 that the specific period of time haselapsed, then at step S103, the controller 60 acquires a measurementvalue using the temperature sensor 58. The measurement value using thetemperature sensor 58 is stored in the temperature measurement valueregister 71. In the acquisition of the measurement values are acquiredwith the temperature sensor 58, measurement may be performed each time aspecific duration (for example, 1 minute) elapses, and an average valueof the plural measurement values obtained by measurement plural timesmay be acquired as the measurement value.

At step S105, the controller 60 stores the acquired measurement value inthe room temperature register 73 if the temperature set in the constanttemperature chamber is room temperature (in this case 25° C.), storesthe measurement value in the high temperature register 74 if thetemperature set in the constant temperature chamber is the hightemperature, and stores the measurement value in the low temperatureregister 72 if the temperature set in the constant temperature chamberis the low temperature, and then ends the first frequency correctionprocessing. The first frequency correction processing may be performedin advance while the semiconductor device 24 is still in a wafer state.

The user performs the processing of each of the steps S101 to S105 onthe semiconductor device 24 in a state in which the semiconductor device24 is placed inside the constant temperature chamber that is set in roomtemperature, in a state in which the semiconductor device 24 is placedin the constant temperature chamber that is set in the high temperature,and in a state in which the semiconductor device 24 is placed in theconstant temperature chamber that is set in the low temperature. Themeasurement values using the temperature sensor 58 are therebyrespectively stored in the room temperature register 73, the hightemperature register 74 and the low temperature register 72.

The semiconductor device 24 according to the present exemplaryembodiment is shipped after performing the above processing, and thesecond frequency correction processing, described later, is performed ata predetermined timing after shipping.

A user may execute, for example after shipping, the second frequencycorrection processing on the semiconductor device 24, by inputting aderivation operation signal to the semiconductor device 24 for startingderivation of frequency correction values. At this time, the user mayinput the derivation operation signal to the semiconductor device 24 byconnecting a device that outputs the derivation operation signal to theleads 38 of the semiconductor device 24. Alternatively, thesemiconductor device 24 may execute the second frequency correctionprocessing at a specific time interval.

FIG. 10 is a flow chart illustrating the second frequency correctionprocessing in the semiconductor device 24 according to the presentexemplary embodiment. A program of the second frequency correctionprocessing is executed after shipping the semiconductor device 24, at atime when the derivation operation signal is input, and is pre-installedin a storage section of the controller 60.

At step S201, the controller 60 acquires the measurement valuesrespectively stored in the room temperature register 73, the hightemperature register 74 and the low temperature register 72.

At step S203, the controller 60 derives a correction value for theoscillation frequency of the oscillator 28 (referred to below as a“frequency correction value”) using the measurement values acquired atstep S201.

FIG. 11 is a graph illustrating a relationship between temperature andfrequency deviation in a semiconductor device according to the presentexemplary embodiment. FIG. 11 does not illustrate the frequency errorsobtained in an actual temperature environment, but illustratestheoretical values obtained by computation using a quadratic function.This quadratic function is represented by the following Equation (1),where f is a frequency deviation, a is a second order temperaturecoefficient, T is the measured temperature, T₀ is a vertex temperature,and b is a vertex error. The second order temperature coefficient a is aconstant predetermined according to individual differences in theoscillators 28, and is pre-stored in the storage section of thecontroller 60.

f=a×(T−T ₀)² +b  (1)

In the first exemplary embodiment, although the frequency deviation f isunknown, the vertex error b can be derived from the known second ordertemperature coefficient a, the measurement value at room temperaturestored in the room temperature register 73, the measurement value athigh temperature stored in the high temperature register 74, and themeasurement value at low temperature stored in the low temperatureregister 72. The controller 60 takes the value of the vertex error b asthe frequency correction value in order to give the smallest frequencydeviation for the temperature T at room temperature.

For example, in deriving the above frequency correction value, if themeasurement value by the temperature sensor 58 is −8° C. in ameasurement environment of −10° C., a correction corresponding to +2° C.is required. At the product shipping stage, measurement values at threepoints stored in each of the registers, that are, at the roomtemperature, at the high temperature and at the low temperature, areread through the data bus 76, and the temperature in the actualenvironment is derived using the read data as trimming data. If themeasurement value by the temperature sensor 58 is a value not stored inany of the registers, the nearest two register values may be employed toderive the temperature in the actual environment.

Then at step S205, the controller 60 stores data indicating thefrequency correction value derived at step S203 in the frequencycorrection register 75. Then in the semiconductor device 24, thefrequency divider circuit 53 employs the frequency correction valuestored in the frequency correction register 75 to generate a clocksignal from the signal input from the oscillation circuit 51, so as toperform correction on the oscillation frequency of the oscillator 28.

Thus, in the semiconductor device 24 according to the first exemplaryembodiment, measurement values of the temperature sensor 58 under threeenvironmental temperature points of the semiconductor device 24 areprepared and stored as trimming data before shipping. A frequencycorrection value based on high precision temperature data can beobtained without depending on manufacturing variance for each individualtemperature sensor 58 of the semiconductor device 24, by deriving afrequency correction value based on the trimming data.

In conventional packaged semiconductor devices, such as illustrated inFIG. 32, when the semiconductor device is driven, a surroundingtemperature Ta (° C.) of the semiconductor device, a package surfacetemperature Tc (° C.) and a chip surface temperature Tj (° C.) are eachdifferent from each other. For example, the chip surface temperature Tjis expressed by the following Equation (2), where θj a is the packagethermal resistance (between junction and atmosphere) and P is the powerconsumption of the chip (either a maximum or average value).

Tj=P×θja+Ta  (2)

However, in the semiconductor device 24 according to the presentexemplary embodiment, since the temperature sensor 58 and the oscillator28 are integrated and sealed together, the surrounding temperature ofthe temperature sensor 58 and the surrounding temperature of theoscillator 28 will be substantially the same, and the temperature of theoscillator 28 can be measured with high precision by the temperaturesensor 58 incorporated in the LSI 30. Therefore, it is possible toprevent a fall in the precision of frequency correction due to atemperature difference between the oscillator 28 and the temperaturesensor 58.

Second Exemplary Embodiment

Explanation follows regarding a semiconductor device 24 according to asecond exemplary embodiment. The same reference numerals are allocatedto configuration similar to that of the first exemplary embodiment, andfurther explanation thereof will be omitted.

As illustrated in FIG. 12, the semiconductor device 24 according to thesecond exemplary embodiment has a clock generation device including areference signal oscillator 80 that is connected to an LSI 30A andinputs a clock signal (referred to below as a “reference clock signal”)that acts as a reference during oscillation frequency correction of theoscillator 28. In addition to the configuration of the LSI 30 of thesemiconductor device 24 according to the first exemplary embodiment, theLSI 30A of the semiconductor device 24 according to the second exemplaryembodiment includes a measurement counter 81, a reference counter 82,and an output terminal 83 that outputs a clock signal from anoscillation circuit 51 to an external device.

As illustrated in FIG. 13A and FIG. 13B, the reference signal oscillator80 is an oscillator such as a quartz oscillator with a higheroscillation frequency than the oscillator 28. In the second exemplaryembodiment, the oscillation frequency of the oscillator 28 is 32.768kHz, and the oscillation frequency of the reference signal oscillator 80is 10 MHz.

The measurement counter 81 is connected to the oscillation circuit 51,receives a clock signal (referred to below as a “measurement clocksignal”) of the oscillator 28 from the oscillation circuit 51, andcounts the number of clocks of the received clock signal, under controlof the controller 60. The reference counter 82 is connected to the clockgeneration device including the reference signal oscillator 80, receivesthe clock signal from the reference signal oscillator 80, and counts thenumber of clocks of the received clock signal, under control of thecontroller 60. As illustrated in FIG. 13A and FIG. 13B, the referencecounter 82 and the measurement counter 81 perform counting of the numberof clocks while mutually synchronized, and at substantially the sametime within substantially the same time period. The measurement counter81 and the reference counter 82 may be mutually synchronized accordingto an operation signal, or by employing a synchronization counter.

In the second exemplary embodiment, a registry section 70 includes: atemperature measurement value register 71 that stores data expressingthe temperature measured by the temperature sensor 58; a low temperatureregister 72 that stores data expressing a temperature measured by thetemperature sensor 58 when the surrounding temperature is a referencetemperature that is a lower temperature than room temperature (25° C.)and a frequency error at this temperature; a room temperature register73 that stores data expressing a temperature measured by the temperaturesensor 58 when the surrounding temperature is room temperature (25° C.)and a frequency error at this temperature; a high temperature register74 that stores data expressing a temperature measured by the temperaturesensor 58 when the surrounding temperature is a reference temperaturethat is a higher temperature than room temperature (25° C.) and afrequency error at this temperature; and a frequency correction register75 that stores data expressing frequency correction values derived fromthe above data expressing the frequency errors.

Oscillation Frequency Correction

During, for example, a shipping test, A user first places thesemiconductor device 24 inside a constant temperature chamber in whichthe temperature is set at room temperature (25° C. in this case). Theuser then executes first frequency correction processing in thesemiconductor device 24 by, for example, inputting a measurementoperation signal to start measuring the temperature using thetemperature sensor 58 to the semiconductor device 24. At this time, theuser may input the measurement operation signal to the semiconductordevice 24 by, for example, connecting a device that outputs themeasurement operation signal to the leads 38 of the semiconductor device24. The measurement operation signal contains data indicating whichtemperature among the room temperature, the high temperature and the lowtemperature is set in the constant temperature chamber.

FIG. 14 is a flow chart illustrating a flow of the first frequencycorrection processing in the semiconductor device 24 according to thepresent exemplary embodiment. A program of the first frequencycorrection processing is executed before shipping the semiconductordevice 24 at a time when the measurement operation signal is input, andis pre-installed in a storage section of the controller 60.

At step S301, the controller 60 determines whether or not a specificperiod of time (for example, several hours) has elapsed from input ofthe measurement operation signal. The specific period of time should beat least a period of time required for the internal temperature of thesemiconductor device 24 (the temperature of the LSI 30A) to reach thetemperature of the constant temperature chamber.

If it is determined at step S301 that the specific period of time haselapsed, then at step S303, the controller 60 acquires a measurementvalue using the temperature sensor 58. The measurement value using thetemperature sensor 58 is stored in the temperature measurement valueregister 71. The temperature sensor 58 has been confirmed by testing tohave a measurement accuracy of a predetermined reference value orbetter, and it is guaranteed that temperature measurements can beperformed in high precision with the temperature sensor 58.Alternatively, correction of the temperature sensor 58 may be performedusing the measurement values by the temperature sensor 58.

At step S305, the controller 60 performs frequency error derivationprocessing that derives errors in the oscillation frequency of theoscillator 28. FIG. 15 is a flow chart illustrating a flow of thefrequency error derivation processing according to the present exemplaryembodiment. FIG. 16A is a diagram illustrating a timing chart of thefrequency error derivation processing according to the present exemplaryembodiment when counting is started. FIG. 16B is a diagram illustratinga timing chart of the frequency error derivation processing whencounting is stopped.

At step S401, the controller 60 outputs a correction operation signal tothe measurement counter 81. The measurement counter 81 input with thecorrection operation signal then starts operation at step S403 so as tostart counting clock values of the clock signal from the oscillator 28and to output a start signal to the reference counter 82.

At step S405, the reference counter 82 that has received the startsignal starts counting clock values of the clock signal from thereference signal oscillator 80. Namely, as illustrated in FIG. 16A, themeasurement counter 81 starts counting when the correction operationsignal switches ON, and the reference counter 82 also starts counting insynchronization with the measurement counter 81.

At step S407, it is determined whether or not the count value of themeasurement counter 81 is a predetermined specific value (in the presentexemplary embodiment 32,768 per second) or greater. The measurementcounter 81 continues counting if it is determined that the count valueis the specific value or greater at step S407.

If it is determined that the count value is the specific value orgreater at step S407, then at step S409, the measurement counter 81stops counting and also outputs a stop signal to the reference counter82.

The reference counter 82 that has received the stop signal then stopscounting at step 5411. Namely, as illustrated in FIG. 16B, themeasurement counter 81 stops counting when the correction operationsignal switches OFF, and the reference counter 82 also stops counting insynchronization with the measurement counter 81.

At step S413, the controller 60 acquires the count value of thereference counter 82.

At step S415, the controller 60 derives an error in oscillationfrequency of the oscillator 28 based on the count value of the referencecounter 82 acquired at step S413. Namely, the controller 60 derives theerror in the oscillation frequency of the oscillator 28 by comparing thecount value (that is, 32,768) obtained within a period of time in themeasurement clock signal from the oscillator 28 with the count valueobtained within the same period of time in the reference clock signalfrom the reference signal oscillator 80 that is capable of timing at ahigher accuracy than the oscillator 28.

For example, since the oscillation frequency of the reference signaloscillator 80 is 10 MHz, if the count value of the reference counter 82is “10,000,000 (in decimal numbering)”, it is estimated that theoscillator 28 has accurately timed one second. In this case the error inthe oscillation frequency is 0, and there is no need to performcorrection, and the error of the oscillation frequency (frequencycorrection value) is set to 0. However, if the count value of thereference counter 82 is “10,000,002 (in decimal numbering)”, it isestimated that the oscillation frequency of the oscillator 28 is 0.2 ppmslow. Therefore, the oscillation frequency of the oscillator 28 needs tobe corrected by this error amount, namely, needs to be speeded up by 0.2ppm, and the error of the oscillation frequency (frequency correctionvalue) is set to +0.2 ppm. As a further example, if the count value ofthe reference counter 82 is “9,999,990 (in decimal numbering)”, theoscillation frequency of the oscillator 28 is estimated to be fast by1.0 ppm. Therefore, the oscillation frequency of the oscillator 28 needsto be corrected by this error amount, namely, needs to be slowed by 1.0ppm, and the error of the oscillation frequency (the frequencycorrection value) is set to −1.0 ppm.

At step S417, the controller 60 stops the correction operation signalfrom being output from the measurement counter 81, and ends thefrequency error derivation processing program. The measurement counter81 and the reference counter 82 stop operating when input of thecorrection operation signal ceases.

At step 307, the controller 60 stores the measurement value of thetemperature acquired at step S303 and the frequency error derived atstep S415. These are stored in the room temperature register 73 when thetemperature in the constant temperature chamber is set at roomtemperature, in the high temperature register 74 when the temperature inthe constant temperature chamber is set at high temperature, and in thelow temperature register 72 when the temperature in the constanttemperature chamber is set at low temperature. Then, the first frequencycorrection processing is ended.

The user performs the processing of each of the steps S301 to S309 onthe semiconductor device 24 in a state in which the semiconductor device24 is placed inside the constant temperature chamber that is set in roomtemperature, in a state in which the semiconductor device 24 is placedin the constant temperature chamber that is set in the high temperature,and in a state in which the semiconductor device 24 is placed in theconstant temperature chamber that is set in the low temperature. Themeasurement values using the temperature sensor 58 and the error in theoscillation frequency of the oscillator 28 are thereby respectivelystored in the room temperature register 73, the high temperatureregister 74 and the low temperature register 72.

The semiconductor device 24 according to the present exemplaryembodiment is shipped after the above processing has been performed, andthe oscillation frequency of the oscillator 28 is corrected according toabove Equation (1) at a predetermined timing after shipping using thedata expressing the frequency correction values stored in the frequencycorrection register 75. In the second exemplary embodiment the secondorder temperature coefficient a, and the vertex error b are determinedbased on the derived frequency errors for each of the temperatures.These values may be derived by a straight line approximation using thedifference in values of the oscillation frequency errors stored in aregister of higher temperature and a register of lower temperature thanthe temperature at which frequency error determination is desired. Thensecond frequency correction processing, described later, that correctsthe oscillation frequency of the oscillator 28 using the above Equation(1) is performed at the time of a system reset and/or periodically, orin response to input of a specific signal through the leads 38.

A user may execute the second frequency correction processing on thesemiconductor device 24, by, for example, inputting a derivationoperation signal to the semiconductor device 24 for starting derivationof frequency correction values. At this time, the user may input thederivation operation signal by, for example, connecting a device thatoutputs the derivation operation signal to the leads 38 of thesemiconductor device 24.

FIG. 17 is a flow chart illustrating the second frequency correctionprocessing in the semiconductor device 24 according to the presentexemplary embodiment. A program of the second frequency correctionprocessing is executed at a time when the derivation operation signal isinput, and is pre-installed in a storage section of the controller 60.

At step S503, the controller 60 measures the current surrounding(environment) temperature using the temperature sensor 58 and acquiresthe measurement values. The measurement value by the temperature sensor58 is stored in the temperature measurement value register 71.

At step S505, the controller 60 determines whether or not thetemperature acquired at step S503 is different from the temperaturemeasured in the constant temperature chamber (for example thetemperature acquired at step S303). This step is optional, and if suchdetermination is not required, after step S503, processing maytransition to step S507 without performing the processing of step S505.

At step S505, if it is determined that the temperature is not different,the controller 60 determines that there is no need to change thefrequency correction value, and ends the second frequency correctionprocessing.

If it is determined that the temperature is different at step S505, atstep S507 the controller 60 derives a frequency error by performingsimilar processing to that of step S305. Further, at step S507, thecontroller 60 substitutes data stored in each of the registers of theregistry section 70 in above Equation (1) in order to derive the secondorder temperature coefficient a and the vertex error b.

At step S511, the controller 60 stores the frequency correction value inthe frequency correction register 75. If it has been determined at stepS505 that the temperature is not different, the temperature and thefrequency errors stored in the low temperature register 72, the roomtemperature register 73 and the high temperature register 74 areemployed to derived the frequency correction value, which is then storedin the storage section. However, if it has been determined at step S505that the temperature is different, the frequency error derived at stepS507 is employed to derived the frequency correction value, which isthen stored in the storage section.

In the semiconductor device 24, the frequency divider circuit 53corrects the signal input from the oscillation circuit 51 based on thefrequency correction value stored in the frequency correction register75, whereby correction of the oscillation frequency of the oscillator 28is performed.

As described above, since the semiconductor device 24 according to thesecond exemplary embodiment measures the frequency error at the actualtemperature, it is possible to keep stable timing even if there aredifferences in the frequency deviation due to temperature resulting frommanufacturing variation in the oscillator 28.

Since a time correction circuit is built in the LSI 30A of thesemiconductor device 24 according to the second exemplary embodiment,time measurements can be performed at high precision even if thefrequency precision in the clock signal supplied from an external deviceis low.

Further, in the semiconductor device 24 according to the secondexemplary embodiment, a terminal that becomes free due to building inthe oscillator 28 can be diverted to a separate function (for example,additional serial communication or I2C). Therefore, functionality of thesemiconductor device 24 can be increased even though the number ofterminals is limited.

The error derivation method is not limited to that employed in thepresent exemplary embodiment, that is, using the reference signaloscillator 80, the measurement counter 81 and the reference counter 82to derive the error in the oscillation frequency of the oscillator 28.Alternatively, an actual timing of a specific period of time by theoscillator 28 may be measured by comparing the specific period of time(in the present exemplary embodiment, one second (32,768 CLK)) that hasbeen timed by the clock signal output from an oscout terminal of theoscillation circuit 51 with the specific period of time measuredaccurately by another method.

In addition to performing error correction on the oscillation frequencyof the oscillator 28 in the semiconductor device 24 according to thesecond exemplary embodiment, correction considering the measurementerror of the temperature sensor 58 in the semiconductor device 24according to the first exemplary embodiment may also be performed.

FIG. 18 and FIG. 19 are block diagrams illustrating other examples ofelectrical configurations of the LSI 30A of the semiconductor device 24according to the present exemplary embodiment.

As illustrated in FIG. 18, the semiconductor device 24 may include anoutput terminal 84, and the error in the oscillation frequency of theoscillator 28 (the frequency correction value) derived by the controller60 may be output to an external device from the semiconductor device 24through the output terminal 84. This configuration enables to performregular calibration in order to discover deterioration in thecharacteristics of the reference clock generation device.

As illustrated in FIG. 19, a high precision clock generation circuit 85that serves as a calibration reference may be connected to themeasurement counter 81 the LSI 30A of the semiconductor device 24 to actfor. In such cases, at the above step S413, the controller 60 acquiresthe count value of the measurement counter 81 and the count value of thereference counter 82, and compares the count value of the measurementcounter 81 with the count value of the reference counter 82. Forexample, given that the frequency of the clock signal of the measurementcounter 81 is 10 MHz, and the frequency of the clock generation circuit85 connected to the measurement counter 81 is 10 MHz. Then, the countvalue of the measurement counter 81 and the count value of the referencecounter 82 will be the same value if the clock generation deviceincluding the reference signal oscillator 80 and the clock generationcircuit 85 connected to the measurement counter 81 generate clocksignals having the same frequency. However, if the characteristics ofthe reference signal oscillator 80 have varied, there will be adifference between the count value of the measurement counter 81 and thecount value of the reference counter 82. If there is a differencebetween the count value of the measurement counter 81 and the countvalue of the reference counter 82, the controller 60 may determineswhether or not the difference is within a predetermined permissibleerror range, and may output the determination result to the outputterminal 84. Thus, regular calibration can be performed in order todiscover deterioration in the characteristics of the clock generationdevice including the reference signal oscillator 80.

As illustrated in FIG. 19, in cases in which the clock generationcircuit 85 is built into the LSI 30A of the semiconductor device 24, aselector 86 may be provided in the LSI 30A, to which one of the clocksignal output from the oscillation circuit 51 or the clock signal outputfrom the clock generation circuit 85 is selectively input, and whichoutputs the selected one to the measurement counter 81. Thesemiconductor device 24 illustrated in FIG. 19 can operate similarly tothe semiconductor device 24 illustrated in FIG. 18 due to providing theselector 86.

Third Exemplary Embodiment

Explanation next follows regarding a semiconductor device 200 accordingto a third exemplary embodiment. Configuration that is similar to thatof the first exemplary embodiment is allocated the same referencenumerals and explanation is omitted thereof. As illustrated in FIG. 20and FIG. 21, an oscillator 28 is mounted through a bonding agent to anoscillator mounting beam 206 on a front face of a lead frame 202 thatconfigures the semiconductor device 200 according to the presentexemplary embodiment. An LSI 30 is mounted through a bonding agent to adie pad 202A on the back face of the lead frame 202.

The LSI 30 is mounted on the die pad 202A such that it is displaced tothe left side than the central portion of the die pad 202A withoutoverlapping with opening sections 202C formed in the die pad 202A.Therefore, the entire face of the LSI 30 is accordingly bonded to thedie pad 202A.

The procedure of configuring the semiconductor device 200 includingfixing the oscillator 28 to a first face of the die pad 202A, fixing theLSI 30 to a second face that is the opposite side to the first face, andconnecting oscillator electrode pads 54 of the LSI 30 and externalelectrodes 34 of the oscillator 28, and connecting electrode pads 50 ofthe LSI 30 and inner leads 38A using bonding wires 52, is similar tothat of the semiconductor device 24 of the first exemplary embodiment,as illustrated in FIG. 6A to FIG. 6E. The procedure of sealing thesemiconductor device 200 with a molding resin 32 is also similar asillustrated in FIG. 7A to FIG. 7D.

In the semiconductor device 200 according to the present exemplaryembodiment, the bonding strength of the LSI 30 is increased incomparison with the semiconductor device 24 of the first exemplaryembodiment. Further, since the whole faces of the external electrodes 34of the oscillator 28 are exposed, the oscillator electrode pads 54 andthe external electrodes 34 can be easily connected using the bondingwires 52.

Fourth Exemplary Embodiment

Explanation follows regarding a semiconductor device 300 according to afourth exemplary embodiment. Configuration that is similar to that ofthe first exemplary embodiment is allocated the same reference numeralsand explanation is omitted thereof. As illustrated in FIG. 22 and FIG.23, a lead frame 302 of the semiconductor device 300 according to thepresent exemplary embodiment is configured with support beams 302C andan oscillator mounting beam 302D spanning between a circular shaped diepad 302A and an outer frame portion 302B provided at the peripheraloutside of the die pad 302A.

The die pad 302A is positioned at the center portion of the lead frame302, and is smaller than the LSI 30 that is mounted to the back face ofthe die pad 302A. The support beams 302C extend towards the top, bottomand left side of the die pad 302A in FIG. 22, and the oscillatormounting beam 302D extends towards the right side of the die pad 302A.The oscillator mounting beam 302D is formed so as to have a wider widththan the support beams 302C, and the width of the oscillator mountingbeam 302D is formed narrower than a distance between the externalelectrodes 34 of the oscillator 28, and the oscillator 28 is mountedthereto through a bonding agent.

The procedure of configuring the semiconductor device 300 includingfixing the oscillator 28 to a first face of the die pad 302A, fixing theLSI 30 a second face that is the opposite side to the first face, andconnecting oscillator electrode pads 54 of the LSI 30 and externalelectrodes 34 of the oscillator 28, and connecting electrode pads 50 ofthe LSI 30 and leads 38 using bonding wires 52, is similar to that ofthe semiconductor device 24 of the first exemplary embodiment, asillustrated in FIG. 6A to FIG. 6E. The procedure of sealing thesemiconductor device 300 with a molding resin 32 is also similar asillustrated in FIG. 7A to FIG. 7D.

In the semiconductor device 300 according to the present exemplaryembodiment, the die pad 302A is formed as small as possible, and theoutside of the die pad 302A is punched out. Therefore, it is possible tosave in the material cost for the lead frame 302 compared to thesemiconductor device 24 according to the first exemplary embodiment.

Further, since the die pad 302A is made small, the contact surface areabetween the molding resin 32 and the LSI 30 is larger than in the firstexemplary embodiment. The adhesion force of the molding resin 32 to theLSI 30 is greater than the adhesion force between the LSI 30 and the diepad 302A and, therefore, the LSI 30 is rendered less liable to peel offas the contact surface area between the molding resin 32 and the LSI 30is increased. In particular, in cases in which the semiconductor device300 is mounted onto a board by reflow or the like, the semiconductordevice 300 is heated and there are concerns that the adhesion forcebetween the die pad 302A and the molding resin 32 might decrease.However, adhesion force can be maintained even in cases in which thesemiconductor device 300 is heated by making the die pad 302A smallerand making the contact surface area between the molding resin 32 and theLSI 30 larger.

Moreover, the support beams 302C and the oscillator mounting beam 302Dare disposed inside the outer frame portion 302B in a cross shape(lattice shape), and the oscillator 28 is mounted so as to orthogonallyintersect with the oscillator mounting beam 302D. Therefore, contact andshorting between the support beams 302C and the external electrodes 34of the oscillator 28 can be prevented. In another embodiment, thesupport beams 302C supporting the die pad 302A may be eliminated, andthe outer frame portion 302B and the die pad 302A may be coupledtogether only by the oscillator mounting beam 302D in a cantilevermanner.

Fifth Exemplary Embodiment

Explanation follows regarding a semiconductor device 400 according to afifth exemplary embodiment. Configuration that is similar to that of thefirst exemplary embodiment is allocated the same reference numerals andexplanation is omitted thereof. As illustrated in FIG. 24 and FIG. 25, astepped portion 404 is provided to a die pad 402A positioned at a centerportion of a lead frame 402 according to the present exemplaryembodiment. The stepped portion 404 extends along the up-down directionof the die pad 402A in FIG. 24, and is sloped upwards from the lefttowards the right as illustrated in FIG. 25. The die pad 402A can beaccordingly divided into a lower positioned first mounting face 402B andan upper positioned second mounting face 402C, with the stepped portion404 as the boundary therebetween.

The first mounting face 402B and the second mounting face 402C areprovided contiguously on the back face of the lead frame 402, and areformed parallel to inner leads 408A. An LSI 30 is mounted to the firstmounting face 402B through a bonding agent, and electrode pads 50provided to the lower face of the LSI 30 and the inner leads 408A areelectrically connected by bonding wires 412.

An oscillator 28 is mounted to the second mounting face 402C through abonding agent. The second mounting face 402C is accordingly positionedabove the first mounting face 402B by the difference in the thicknessesof the LSI 30 and the oscillator 28, and the lower face of the LSI 30and the lower face of the oscillator 28 are positioned at the sameheight as each other.

As illustrated in FIG. 25, the bonding wires 412 that connect theelectrode pads 50 and the inner leads 408A are formed so as to straddlethe bonding wires 412 that connected the oscillator electrode pads 54and the external electrodes 34. Namely, in order to prevent shorting ofthe bonding wires 412, the apexes of the bonding wires 412 that connectthe oscillator electrode pads 54 and the external electrodes 34 are madeto be lower (less far away from the lead frame 402) than the apex of thebonding wires 412 that connect the electrode pads 50 and the inner leads408A.

Manufacturing Procedure

Explanation follows regarding a manufacturing procedure of thesemiconductor device 400.

First, as illustrated in FIG. 26A, the lead frame 402 is placed on amounting block 2 of a bonding apparatus 1 such that the inner leads 408Aare positioned upwards and the die pad 402A is positioned lower. A step8 is formed on the mounting block 2 so as to hold the portion at whichthe second mounting face 402C of the die pad 402A is formed. In thisstate, the first mounting face 402B and the second mounting face 402Cboth face upwards. The oscillator 28 is conveyed in a state in which itis sealed in a package 29 on a tape and the external electrodes 34 facesupwards. The stepped portion 404 is pre-formed in the lead frame 402 bya process such as pressing.

Next, as illustrated in FIG. 26B, the package 29 is unsealed, and theoscillator 28 is taken out with a picker 4. The oscillator 28 isdisposed on the first mounting face 402B of the die pad 402A such thatthe external electrodes 34 of the oscillator 28 are facing upwards, andis fixed to the first mounting face 402B with a bonding agent, asillustrated in FIG. 26C. In cases in which the oscillator 28 is sealedin the package 29 in a state in which the external electrodes 34 facedownwards, it is preferable to employ a picker 4 with a rotationmechanism, vertically invert the oscillator 28 using the rotationmechanism after taking out the oscillator 28 using the picker 4, and toplace the oscillator 28 on the first mounting face 402B of the die pad402A after making the external electrodes 34 to face upwards.

After fixing the oscillator 28 to the first mounting face 402B, the LSI30 is fixed by a bonding agent to the second mounting face 402C of thedie pad 402A, as illustrated in FIG. 26D, such that the electrode pads50 and the oscillator electrode pads 54 face upwards. Since the secondmounting face 402C is formed without overlapping with the first mountingface 402B in plan view, the LSI 30 is also fixed without overlappingwith the oscillator 28 in plan view. Further, the LSI 30 and theoscillator 28 are fixed to the faces at the same side of the die pad402A.

After the LSI 30 has been fixed to the second mounting face 402C, asillustrated in FIG. 26E, the electrode pads 50 of the LSI 30 and theinner leads 408A of the lead frame 402 are connected with the bondingwires 412, and the oscillator electrode pads 54 of the LSI 30 and theexternal electrodes 34 of the oscillator 28 are connected with thebonding wires 412.

Explanation next follows regarding a procedure of sealing thesemiconductor device 400 with a molding resin 32.

As illustrated in FIG. 27A, in a state in which the semiconductor device400 has been vertically inverted from the state illustrated in FIG. 26E,the semiconductor device 400 is fixed inside a cavity 6 of a mold 5. Atthis time, it is preferable to dispose the semiconductor device 400 suchthat the side of the semiconductor device 400 at which the LSI 30 ismounted is positioned closer to a pouring hole 7 in the mold 5 forpouring the molding resin 32 than the side at which the oscillator 28 ismounted, and a side of the die pad 402A on which the LSI 30 is mountedis positioned in the vicinity of the height direction center of thecavity 6. Further, the semiconductor device 400 is disposed such thatouter leads 408B are projected out to the outside of the mold 5.

After the semiconductor device 400 has been fixed inside the cavity 6,the molding resin 32 is poured into the cavity 6 through the pouringhole 7, as illustrated by the arrow a in FIG. 27B.

As illustrated in FIG. 27C, the molding resin 32 that has been poured inthrough the pouring hole 7 flows evenly above and below the lead frame402 at the portion where the LSI 30 is fixed to the lead frame 402 (thedie pad 402A).

However, since the stepped portion 404 is formed to the lead frame 402(the die pad 402A) in the thickness direction, the portion where theoscillator 28 is fixed to the die pad 402A is bent upwards in FIG. 27Ato FIG. 27D with respect to the portion where the LSI 30 is fixed, withthe stepped portion 404 defining the boundary therebetween.

Consequently, as illustrated by the arrows c in FIG. 27D, at the portionwhere the oscillator 28 is fixed to the die pad 402A, the flow speed ofthe molding resin 32 below the die pad 402A is slower than the flowspeed of the molding resin 32 above the die pad 402A. Hence at theportion of the die pad 402A where the oscillator 28 is fixed, the lowerportion in the cavity 6 is preferentially filled with the molding resin32, the lead frame 402 (the die pad 402A) is supported from below by thepoured molding resin 32.

After both sides of the lead frame 402 are filled with the molding resin32, the mold 5 is heated to cure the molding resin 32.

In the semiconductor device 400 according to the present exemplaryembodiment, since the oscillator 28 and the LSI 30 are both mounted onthe back face of the lead frame 402, there is no need to invert the leadframe 402 while mounting the oscillator 28 and the LSI 30. Manufacturingefficiency of the semiconductor device 400 can be thereby improvedcompared to the first exemplary embodiment.

Further, taking the side on which the bonding wires 412 are formed asthe lower side, and the second mounting face 402C is positioned lowerthan the first mounting face 402B. Therefore, the oscillator 28 does notimpede the bonding wires 412 while connecting the electrode pads 50 ofthe LSI 30 and the inner leads 408A by the bonding wires 412 such thatthe bonding wires 412 straddle across the oscillator 28.

Embodiments are not limited to the configuration in the presentexemplary embodiment in which the first mounting face 402B and thesecond mounting face 402C are provided on the back face of the leadframe 402, and they may be provided on the front face of the lead frame402. In such cases, a configuration in which the oscillator 28 does notimpede the bonding wires 412 can be achieved by taking the side formedwith the bonding wires 412 as the lower side, and forming the secondmounting face 402C lower than the first mounting face 402B.

Further, embodiments are not limited to the configuration in the presentexemplary embodiment in which the second mounting face 402C is formedlower than the first mounting face 402B by the difference in thicknessof the LSI 30 and the oscillator 28, as illustrated in FIGS. 27A to 27E.A step may be provided of an amount such that the bonding wires 412 arenot impeded, and the lower face of the oscillator 28 may position lowerthan the lower face of the LSI 30.

Sixth Exemplary Embodiment

Explanation follows regarding a semiconductor device 500 according to asixth exemplary embodiment. Configuration that is similar to that of thefirst exemplary embodiment is allocated the same reference numerals andexplanation is omitted thereof. As illustrated in FIG. 28 and FIG. 29, astepped portion 504 is formed in a die pad 502A positioned at a centerportion of a lead frame 502 according to the present exemplaryembodiment, similarly to the fifth exemplary embodiment. As illustratedin FIG. 29, the stepped portion 504 slopes upwards from left to right,and the die pad 502A is divided into a lower positioned first mountingface 502B and an upper positioned second mounting face 502C, bounded bythe stepped portion 504.

The first mounting face 502B and the second mounting face 502C areformed contiguously on the back face of the lead frame 502, and areformed parallel to inner leads 508A. An LSI 30 is mounted to the firstmounting face 502B through a bonding agent, and an oscillator 28 ismounted to the second mounting face 502C through a bonding agent. Asillustrated in FIG. 28, the LSI 30 is positioned at a central portion ofthe lead frame 502, and a portion at the right end of the LSI 30 coversa portion of the oscillator 28. Namely, the oscillator 28 and the LSI 30are disposed so as to overlap each other in plan view projection.

A procedure of configuring the semiconductor device 500 including fixingthe oscillator 28 to the first mounting face 502B of the die pad 502A,fixing the LSI 30 to the second mounting face 502C, and connectingoscillator electrode pads 54 of the LSI 30 and external electrodes 34 ofthe oscillator 28, and connecting electrode pads 50 of the LSI 30 andleads 38, using bonding wires 512, is similar to that of thesemiconductor device 400 of the fifth exemplary embodiment, asillustrated in FIG. 26A to FIG. 26E. A procedure of sealing thesemiconductor device 500 with a molding resin 32 is also similarthereto, as illustrated in FIG. 27A to 27D.

In the semiconductor device 500 according to the present exemplaryembodiment, since the LSI 30 is mounted to a central portion of the leadframe 502, the distance between the electrode pads 50 of the LSI 30 andinner leads 508A can be made constant on each of the sides of the LSI30. Therefore, wire bonding can be performed easily. Other operationalaspects are similar to those of the fifth exemplary embodiment.

Although explanation has been given above of the first exemplaryembodiment to the sixth exemplary embodiment, the present invention isnot limited by these exemplary embodiments. Combinations of the firstexemplary embodiment to the sixth exemplary embodiment may be employed,and obviously the present invention may be implemented in variousembodiments within a range not departing from the spirit of the presentinvention. For example, an oscillator including the oscillation circuit51 may be employed as the oscillator 28. The openings 26C illustrated inFIG. 2 may be configured with slit shaped holes.

What is claimed is:
 1. A semiconductor device comprising: an oscillatorthat is configured to oscillate at an oscillation frequency thatcorresponds to a predetermined frequency; and a semiconductor integratedcircuit that integrates a register that stores a value for correcting anerror in the oscillation frequency of the oscillator, a clock generationcircuit that creates a predetermined clock based on the value stored inthe register, a controller that is configured to derive the value forcorrecting the error in the oscillation frequency of the oscillatorbased on a peripheral temperature, and a timer circuit that determines atime based on the clock and transmits the time to the controller.
 2. Thesemiconductor device of claim 1, further comprising a temperature sensorconfigured to detect the peripheral temperature.
 3. The semiconductordevice of claim 1, further comprising a temperature register that storesfrequency correction data for each of a plurality of temperatures,wherein the controller is further configured to receive the frequencycorrection data from the temperature register and to derive the valuefor correcting the error based on the received frequency correctiondata.
 4. The semiconductor device of claim 3, wherein, in cases in whichthe peripheral temperature is different from the plurality oftemperatures, the controller is configured to derive the value forcorrecting the error by employing frequency correction data of one ofthe temperatures higher than the peripheral temperature and frequencycorrection data of another one of the temperatures lower than theperipheral temperature.
 5. The semiconductor device of claim 3, wherein:the temperature register further stores temperature correction data foreach of the plurality of temperatures; and the controller is furtherconfigured to derive the value for correcting the error based on thetemperature correction data stored in the temperature register and thefrequency correction data stored in the temperature register.
 6. Thesemiconductor device of claim 1, further comprising a temperatureregister that stores temperature correction data for each of a pluralityof temperatures, wherein the controller is further configured to receivethe temperature correction data from the temperature register, tocorrect the peripheral temperature based on the received temperaturecorrection, to thereby obtain a corrected temperature, and to derive thevalue for correcting the error using the corrected temperature.
 7. Thesemiconductor device of claim 1, wherein the semiconductor integratedcircuit further comprises an input terminal to which a reference clockis input from an external device, the reference clock having a frequencyhigher than the predetermined frequency of the oscillator, the referenceclock being used by said controller to derive the value for correctingthe error of the oscillation frequency of the oscillator.
 8. Thesemiconductor device of claim 7, further comprising a lead frame onwhich the oscillator and the semiconductor integrated circuit aremounted, the input terminal is electrically connected to the lead frame.9. The semiconductor device of claim 1, wherein the semiconductorintegrated circuit further comprises an output terminal that outputs thevalue for correcting the error of the oscillator that is derived by thecontroller to an external device.
 10. The semiconductor device of claim1, further comprising: an oscillation circuit that is connected to theoscillator and causes the oscillator to oscillate, wherein the clockgeneration circuit includes a frequency divider circuit thatfrequency-divides a signal output from the oscillator and generates thepredetermined clock, and the timer circuit determines the time based onoutputs from the oscillation circuit and the frequency divider circuit.11. The semiconductor device of claim 1, wherein the semiconductorintegrated circuit is of a rectangular shape in a plan view thereof, anda center of the oscillator is substantially aligned with a center of thesemiconductor integrated circuit along an axis of the semiconductorintegrated circuit parallel to two sides of the rectangular shape. 12.The semiconductor device of claim 1, wherein the semiconductorintegrated circuit overlaps the oscillator a plan view thereof.
 13. Ameasurement device, comprising: the semiconductor device of claim 1; ameasurement section that measures integral power consumption based on atime determined according to an oscillation signal from the oscillatorin the semiconductor device; and a display section that displays themeasured integral power and the time.
 14. A semiconductor devicecomprising: an oscillator that is configured to oscillate at anoscillation frequency that corresponds to a predetermined frequency; anda semiconductor integrated circuit that is configured to generate apredetermined clock using a value for correcting an error in theoscillation frequency of the oscillator based on a peripheraltemperature, determine a time based on the generated clock, and transmitthe time to a controller.